issue 1 - march 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXMP7A17G 70v p-channel enhancement mode mosfet summary v dss =70v : r ds(on) =0.16 i d =3.7a description this new generation of trench mo sfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage power management applications. features ? low on-resistance fast switching speed low threshold low gate drive sot223 package applications dc-dc converters power management functions disconnect switches motor control class d audio output stages ordering information device marking zxmp 7a17 device reel size (inches) tape width (mm) quantity per reel ZXMP7A17Gta 7 12 1,000 ZXMP7A17Gtc 13 12 4,000 d s g
ZXMP7A17G issue 1 - march 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 5 sec. (c) repetitive rating 25mm x 25mm fr4 pcb, d=0.05 pulse width=10 s - pulse width limited by maximum junction temperature. parameter symbol limit unit drain-source voltage v dss -70 v gate-source voltage v gs 20 v continuous drain current @ v gs =10v; t a =25c (b) i d -3.7 a @ v gs =10v; t a =25c (b) -2.9 @ v gs =10v; t a =25c (a) -2.6 pulsed drain current (c) i dm -9.6 a continuous source current (body diode) (b) i s -4.8 a pulsed source current (body diode) (c) i sm -9.6 a power dissipation at t a =25c (a) linear derating factor p d 2 16 w mw/c power dissipation at t a =25c (b) linear derating factor p d 3.9 31 w mw/c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 62.5 c/w junction to ambient (b) r ja 32 c/w
ZXMP7A17G issue 1 - march 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
ZXMP7A17G issue 1 - march 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at tamb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -70 v i d = -250 a, v gs =0v zero gate voltage drain current i dss -1 av ds = -70v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d = -250 a, v ds =v gs static drain-source on-state resistance (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. r ds(on) 0.16 v gs = -10v, i d = -2.1a 0.25 v gs = -4.5v, i d = -1.7a forward transconductance (*)(?) g fs 4.4 s v ds = -15v, i d = -2.1a dynamic (?) input capacitance c iss 635 pf v ds = -40v, v gs =0v f=1mhz output capacitance c oss 52 pf reverse transfer capacitance c rss 42.5 pf switching (?) (?) (?) switching characteristics are independ ent of operating junction temperature. (?) for design aid only, not subject to production testing. turn-on-delay time t d(on) 2.5 ns v dd = -35v, i d = -1a r g ? 6.0 , v gs = -10v rise time t r 3.4 ns turn-off delay time t d(off) 27.9 ns fall time t f 8ns total gate charge q g 9.6 nc v ds = -35v, v gs = -5v i d = -2.1a total gate charge q g 18 nc v ds = -35v, v gs = -10v i d = -2.1a gate-source charge q gs 1.77 nc gate drain charge q gd 3.66 nc source-drain diode diode forward voltage (*) v sd -0.85 -0.95 v t j =25c, i s = -2.0a, v gs =0v reverse recovery time (?) t rr 29.8 ns t j =25c, i s = -2.1a, di/dt=100a/ s reverse recovery charge (?) q rr 38.5 nc
ZXMP7A17G issue 1 - march 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXMP7A17G issue 1 - march 2006 6 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXMP7A17G issue 1 - march 2006 7 www.zetex.com ? zetex semiconductors plc 2006 intentionally left blank
ZXMP7A17G issue 1 - march 2006 8 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot223 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim millimeters inches dim millimeters inches min max min max min max min max a - 1.80 - 0.071 e 2.30 bsc 0.0905 bsc a1 0.02 0.10 0.0008 0.004 e1 4.60 bsc 0.181 bsc b 0.66 0.84 0.026 0.033 e 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 e1 3.30 3.70 0.130 0.146 c 0.23 0.33 0.009 0.013 l 0.90 - 0.355 - d 6.30 6.70 0.248 0.264 - - - - -
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